Monolayer Graphene on Si/SiO₂ (90 nm)

Price range: 130,00 € through 590,00 €

High-Mobility Monolayer Graphene on Si/SiO₂ Wafer for GFETs, Biosensors and Nanotechnology

Our Monolayer Graphene on SiO₂ Wafer product combines high-quality CVD-grown graphene with semiconductor-grade silicon substrates featuring 90 nm thermally grown silicon dioxide. Designed for researchers, universities, semiconductor companies, and advanced material developers, this monolayer graphene platform offers excellent carrier mobility, low defect density, and highly uniform transfer quality.

Unlike many graphene products that suffer from transfer defects and inconsistent coverage, our Monolayer Graphene on SiO₂ Wafer provides greater than 95% graphene coverage and excellent electrical properties. Consequently, it is widely used for graphene field-effect transistors (GFETs), biosensors, flexible electronics, photonic devices, MEMS, and advanced nanotechnology research.

For researchers developing next-generation sensing platforms, this graphene substrate provides an excellent combination of surface quality, process compatibility, and electrical performance.


Why Choose Our Monolayer Graphene on SiO₂ Wafer?

Researchers worldwide use Monolayer Graphene on SiO₂ Wafer substrates because they provide a reliable foundation for device fabrication and characterisation. Furthermore, each wafer undergoes strict quality-control procedures to ensure consistent performance from batch to batch.

Key advantages include:

  • High carrier mobility
  • Uniform graphene coverage
  • Low defect density confirmed by Raman spectroscopy
  • High optical transparency (>97%)
  • Semiconductor-compatible substrate
  • Optimised for GFET fabrication
  • Suitable for biosensor development
  • Available in multiple formats
  • Competitive pricing for research laboratories

Monolayer Graphene on Si/SiO₂ Wafer Specifications

Our graphene films are synthesised using Chemical Vapor Deposition (CVD), which is widely recognised as one of the most effective methods for producing large-area monolayer graphene.

Graphene Properties

  • Monolayer graphene
  • CVD-grown material
  • 95% surface coverage
  • 97% optical transparency
  • Typical AFM thickness below 1 nm
  • Raman I(D)/I(G) < 0.1
  • Raman I(G)/I(2D) < 1.25
  • Produced in ISO 7 cleanroom facilities

Substrate Properties

  • Silicon substrate
  • 90 nm thermal SiO₂
  • Single-side polished
  • Semiconductor-grade surface
  • Dielectric constant of SiO₂ = 3.9

Electrical Properties

  • Carrier mobility >2700 cm²/V·s
  • Sheet resistance 350 ± 40 Ω/sq
  • Grain size up to 40 µm
  • Uniform low-defect transfer process

Available Monolayer Graphene on Si/SiO₂ Wafer Sizes

To meet different research requirements, we offer several formats of Monolayer Graphene on SiO₂ Wafer.

1 cm × 1 cm Chips

Each pack contains four chips and is ideal for biosensor fabrication, GFET prototyping, and academic research projects.

1 inch × 1 inch Samples

This popular laboratory format provides sufficient area for device fabrication, electrical testing, and process development.

4-Inch Graphene Wafer

For industrial R&D and semiconductor development, we provide full 4-inch graphene wafers suitable for photolithography, wafer-scale processing, and large-area device manufacturing.


Applications of Monolayer Graphene on SiO₂ Wafer

Because of its excellent electrical and structural properties, Monolayer Graphene on SiO₂ Wafer is suitable for a broad range of applications.

GFET and Graphene Electronics

Researchers commonly use this material for:

  • Graphene field-effect transistors
  • Flexible electronics
  • Printed electronics
  • Nanoelectronics
  • Semiconductor device research

Biosensors and Medical Diagnostics

In addition, the material is highly suitable for:

  • Aptamer biosensors
  • Electrochemical sensors
  • Protein detection
  • DNA sensing
  • Cytokine monitoring
  • Wearable diagnostics

Advanced Research

Furthermore, monolayer graphene enables development of:

  • Photodetectors
  • Optoelectronic devices
  • MEMS and NEMS systems
  • 2D-material heterostructures
  • Quantum devices
  • Microfluidic-integrated sensors

Quality Control and Characterisation

Every Monolayer Graphene on SiO₂ Wafer is characterised before shipment. Therefore, customers receive reliable and reproducible material suitable for demanding research applications.

Quality-control procedures include:

  • Raman spectroscopy
  • Optical microscopy
  • SEM inspection
  • Four-point probe measurements
  • Surface coverage verification

Each shipment includes:

  • Raman spectra
  • Optical images
  • Quality-control report
  • Batch traceability documentation

Related Products

Looking for transfer-ready graphene? Explore our Monolayer Graphene on Copper Foil products available with or without PMMA support layers.

Researchers interested in biosensor fabrication may also be interested in our graphene transfer materials and custom graphene substrates.

Custom graphene solutions available, including custom wafer sizes, graphene transfer, biosensor fabrication, GFETs, and complete device development.


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Dimensions N/A
Size

1-inch × 1-inch, 4-inch wafer, 1 × 1 cm (Pack 4 Units)

Temporary protective Layer

without protective layer, Poly(methyl methacrylate) (PMMA)

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